NGTB25N120LWG Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
NGTB25N120LWG Datasheet PDF : 9 Pages
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NGTB25N120LWG
TYPICAL CHARACTERISTICS
120
TJ = 25°C
100
80
VGE = 20 to 13 V
11 V
10 V
60
40
9V
20
8V
0
7V
0
1
2
3
4
5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
120
TJ = 150°C
100
VGE = 20 to 11 V
80
10 V
60
9V
40
8V
20
7V
0
0
1
2
3
4
5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Output Characteristics
120
VGE = 20 to 13 V
100
80
TJ = −40°C
60
11 V
10 V
40
9V
20
7V
8V
0
0
1
2
3
4
5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
120
100
80
60
40
TJ = 150°C
20
TJ = 25°C
0
0
5
10
15
VGE, GATE−EMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
10,000
Cies
1000
100
10
0
Coes
Cres
25 50 75 100 125 150 175 200
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Typical Capacitance
120
100
TJ = 25°C
TJ = 125°C
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5 3.0
VF, FORWARD VOLTAGE (V)
Figure 6. Diode Forward Characteristics
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