DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NGA-689 Ver la hoja de datos (PDF) - Unspecified

Número de pieza
componentes Descripción
Fabricante
NGA-689 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Parameter
500 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
850 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
1950 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
2400 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
OBSOLETPEreliminary
NGA-689 DC-5.0 GHz 5.8V GaAs HBT
Key parameters, at typical operating frequencies:
Typical
25ºC
Units
Test Condition
(ID = 80mA, unless otherwise noted)
12.0
37.2
19.9
19.6
19.7
dB
dBm
dBm
dB
dB
Tone spacing = 1 MHz, Pout per tone = 0dBm
11.9
36.9
19.9
18.5
19.7
dB
dBm
dBm
dB
dB
Tone spacing = 1 MHz, Pout per tone = 0dBm
11.7
33.6
18.9
16.0
19.5
dB
dBm
dBm
dB
dB
Tone spacing = 1 MHz, Pout per tone = 0dBm
11.6
32.1
17.9
15.9
19.4
dB
dBm
dBm
dB
dB
Tone spacing = 1 MHz, Pout per tone = 0dBm
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Device Current (ID)
Max. Device Voltage (VD)
Max. RF Input Power
120 mA
7V
+13 dBm
Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Max. Storage Temp.
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101442 Rev OBS

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]