NE651R479A-A Ver la hoja de datos (PDF) - California Eastern Laboratories.

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Fabricante

NE651R479A-A

NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET

California Eastern Laboratories. 

NE651R479A

NONLINEAR MODEL

SCHEMATIC

DRAIN

Ldpkg

L=0.001 nH

GATE

Lspkg

L=0.001 nH

Q1

Lg

L=1.45 nH

Ld

L=0.55 nH

Cdspkg

C=0.1 pF

Cdspkg

C=0.1 pF

FET NONLINEAR MODEL PARAMETERS (1)

Parameters

Q1

VTO

0.9255

VTOSC

0

ALPHA

1.5

BETA

0.964

GAMMA

0

GAMMADC(2) 0.002

Q

1.5

DELTA

0

VBI

0.6

IS

1e-16

N

1

RIS

0

RID

0

TAU

30e-12

CDS

0.2e-12

RDB

60

CBS

100e-12

CGSO(3)

14e-12

CGDO(4)

1.1e-12

DELTA1

0.3

DELTA2

0.2

FC

0.5

VBR

Infinity

Parameters

RG

RD

RS

RGMET

KF

AF

TNOM

XTI

EG

VTOTC

BETATCE

FFE

Q1

1.0

0.2

0.05

0

0

1

27

3

1.43

0

0

1

(1) Series IV Libra TOM Model

The parameter in Libra corresponds to the parameter in PSpice:

(2) GAMMADC

GAMMA

(3) CGSO

CGS

(4) CGDO

CGD

Lspkg

L=0.001 nH

SOURCE

UNITS

Parameter

capacitance

inductance

resistance

Units

picofarads

nanohenries

ohms

MODEL RANGE

Frequency: 0.5 to 4 GHz

Bias: VDS = 2.2 V to 4.6 V, ID = 50 mA to 350 mA

Date:

6/02/2003

11/02/2006

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