DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NE6500379A Ver la hoja de datos (PDF) - California Eastern Laboratories.

Número de pieza
componentes Descripción
Fabricante
NE6500379A
CEL
California Eastern Laboratories. CEL
NE6500379A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
NE6500379A
ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS
Drain to Source Voltage
V
15
VGS
Gate to Source Voltage
V
-7.0
IDS
Drain Current
A
5.6
IGS
Gate Current
mA
50
PT
Total Power Dissipation
W
21
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C -65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS
UNITS TYP MAX
VDS
Drain to Source Voltage V
6.0
6.0
TCH
Channel Temperature
°C
125
GCOMP Gain Compression
dB
3.0
ORDERING INFORMATION
PART NUMBER
QTY
NE6500379A-T1
NE6500379A
1 K/Reel
Bulk, 50 piece min.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
22 W
20
15
RTH = 6 °C/W
10
5
0
18 °C
0
50
100
150
Case Temperature, TC (°C)
TRANSCONDUCTANCE AND DRAIN
CURRENT vs. GATE VOLTAGE
2.00
1.00
0.8
0.6
1.00
0.4
0.5
0.00
-3.50
Gate Voltage, VG (V)
0.2
0.00
-1.50
DRAIN CURRENT vs.
DRAIN VOLTAGE
5
4
3
VGS =
0V
-0.50 V
2
-1.0 V
-1.5 V
1
-2.0 V
0
0
1
2
3
4
5
6
Drain Voltage, VD (V)
MAXIMUM AVAILABLE GAIN vs.
FREQUENCY
25.0
20.0
3V
300 mA
15.0
10.0
8V
500 mA
6V
500 mA
5.0
0.1
0.2
0.4 0.6
1.0
2.0
4.0
Frequency, f (GHz)

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]