NDF11N50Z Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
NDF11N50Z Datasheet PDF : 7 Pages
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NDF11N50Z, NDP11N50Z
TYPICAL CHARACTERISTICS
100
VGS v 30 V
SINGLE PULSE
10 TC = 25°C
1 ms 100 ms 10 ms
10 ms
dc
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDF11N50Z
10
DUTY CYCLE = 0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
1E−06
0.01
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 13. Thermal Impedance (Junction−to−Case) for NDF11N50Z
RqJC = 3.4°C/W
Steady State
1E+02 1E+03
LEADS
HEATSINK
0.110″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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