NDP04N60ZG Ver la hoja de datos (PDF) - ON Semiconductor
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NDP04N60ZG Datasheet PDF : 8 Pages
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NDF04N60Z, NDP04N60Z, NDD04N60Z
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State (Note 4)
Symbol
RqJC
RqJA
NDF04N60Z
4.4
50
NDD/NDP
1.3
50
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
VGS = 0 V, ID = 1 mA
BVDSS
600
Breakdown Voltage Temperature
Reference to 25°C,
DBVDSS/
0.6
Coefficient
ID = 1 mA
DTJ
Drain−to−Source Leakage Current
25°C
IDSS
1
VDS = 600 V, VGS = 0 V
150°C
50
Gate−to−Source Forward Leakage
ON CHARACTERISTICS (Note 5)
Static Drain−to−Source
On−Resistance
VGS = ±20 V
VGS = 10 V, ID = 2.0 A
IGSS
RDS(on)
±10
1.8
2.0
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = VGS, ID = 250 mA
VDS = 15 V, ID = 2.0 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
VDD = 300 V, ID = 4.0 A,
VGS = 10 V
Gate Resistance
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 300 V, ID = 4.0 A,
VGS = 10 V, RG = 5 Ω
Fall Time
VGS(th)
3.0
4.5
gFS
3.3
Ciss
535
Coss
62
Crss
14
Qg
19
Qgs
3.9
Qgd
10
Rg
4.7
td(on)
13
tr
9.0
td(off)
24
tf
15
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 4.0 A, VGS = 0 V
VSD
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0 V, VDD = 30 V
trr
IS = 4.0 A, di/dt = 100 A/ms
Qrr
4. Insertion mounted
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
1.6
285
1.3
Unit
°C/W
Unit
V
V/°C
mA
mA
W
V
S
pF
nC
W
ns
V
ns
mC
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