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MX26C1000B

1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM

Macronix International 

MX26C1000B

COMMAND MODE

The 1 Mbit MTP EPROMTM is in Command mode when

high voltage VPPH is applied to the VPP pin. In this state the

available functions are Read, Program, Program Verify,

Erase and Erase Verify. Reset are selected by writing

commands to the input register. Data from the register are

input to the state machine. The output from the state

machine determines the function of the device. The

command register serves as a latch to store data for

executing commands. It does not occupy address- able

memory location. Standard microprocessor write timing

is used. Table 2 defines the register commands. The

command register is written by bringing WE to a logic-low

Level (V IL), while CE is low. Addresses are latched on the

falling edge of WE, while data is latched on the rising edge

of the WE pulse.

Standby and Output disable functions are the same as in

Read Mode, controlled by CE and OE. If the device is

deselected during erasure, programming, or erase/

program verification, the device draws active current until

the operations terminate.

erase operation. The two-step command prevents

accidental alteration to memory array. Erase operation

starts with the rising edge of the WE pulse and terminates

with the rising edge of the next WE pulse, which in this

case is the erase verify command.

ERASE VERIFY

Each erase operation is followed by an erase verify. The

command A0H is written into the command register. The

address of the bytes to be verified is supplied with the

command. The address is latched on the falling edge of

the WE pulse. A reading FFH is returned to confirm all

bits in the byte are erased. This sequence of Set Up

Erase- Erase continues for each address until FFH is

returned. This indicates the entire memory array is

erased and completes the operation. Erase verify operation

starts at address 0000H and ends at the last address.

Maximum erase pulse duration for the 1Mbit MTP

EPROMTM is 100ms with a maximum 30 pulses. Refer to

AC Characteristics and Waveforms for specific timing

parameters.

READ COMMAND

To read memory content, write 00H into the command

register while high voltage is applied to

V PP pin (VPP = VPPH ). Microprocessor read cycle retrieves

the data . The device remains enable for read until the

data in the command register are altered. The device is

default in read mode when power up. This is to ensure no

accidental alteration of the memory occurs during power

transition. Refer to AC Read Characteristics and

Waveforms for specific timing parameters.

SET UP ERASE/ERASE

Preprogram operation is not required prior to the erase

operation. A sequence of commands is required to

perform a complete erase operation: set up erase, erase,

and erase verify. High voltage is applied to the V PP pin

(VPP=VPPH). The command 20H is written to the command

register to initiate the set-up erase mode.

ERASE OPERATION

The same command, 20H, is again written to the

command register. This second command starts bulk

P/N: PM0767

6

REV. 0.7, NOV. 20, 2002

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