MS1642P Ver la hoja de datos (PDF) - Advanced Power Technology

Número de pieza

componentes Descripción

Fabricante

MS1642P

RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE

Advanced Power Technology  

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE TRANSISTORS

VHF, UHF GENERAL PURPOSE

Features

• 400 MHz

• GOLD METALLIZATION

• POUT = 10 W MINIMUM

• GP = 12 dB MINIMUM

• INFINITE VSWR CAPABILITY

• COMMON EMITTER CONFIGURATION

DESCRIPTION:

The MS1642 is a gold metallized silicon NPN transistor

designed for general purpose amplifier applications in

the VHF and UHF frequency bands. Diffused emitter

ballast resistors and computer controlled wirebonding

techniques ensure maximum device reliability and

consistency.

MS1642P

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

PDISS

IC(max)

TSTG

VCBO

VCEO

VEBO

Parameter

Power Dissipation*

Device Current*

Storage Temperature

Collector – Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Thermal Data

RTH(J-C)

Thermal Resistance Junction-case

*Applies only to rated RF amplifier operation

Value

27

1.5

-65 to +150

60

33

4.0

6.4

Unit

W

A

ºC

V

V

V

°C/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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