MPSW06 Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

MPSW06

NPN General Purpose Amplifier

Fairchild Semiconductor 

NPN General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Sustaining Voltage*

V(BR)EBO

Emitter-Base Breakdown Voltage

ICEO

Collector-Cutoff Current

ICBO

Collector-Cutoff Current

IC = 1.0 mA, IB = 0

IE = 100 µA, IC = 0

VCE = 60 V, IB = 0

VCB = 80 V, IE = 0

ON CHARACTERISTICS

hFE

DC Current Gain

VCE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

IC = 10 mA, VCE = 1.0 V

IC = 100 mA, VCE = 1.0 V

IC = 100 mA, IB = 10 mA

IC = 100 mA, VCE = 1.0 V

SMALL SIGNAL CHARACTERISTICS

fT

Current Gain - Bandwidth Product

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

IC = 10 mA, VCE = 2.0 V,

f = 100 MHz

80

V

4.0

V

0.1

µA

0.1

µA

100

100

0.25

V

1.2

V

100

MHz

Spice Model

NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0

Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5

Vtf=4 Xtf=6 Rb=10)

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