MPSH10 Ver la hoja de datos (PDF) - Philips Electronics
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MPSH10 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN 1 GHz general purpose switching transistor
Product specification
MPSH10
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
Rth j-a
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
note 1
Note
1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEsat
VBEon
ICBO
IEBO
hFE
Cre
Crb
fT
rbCc
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter saturation voltage
base-emitter ON voltage
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter feedback capacitance
collector-base feedback capacitance
transition frequency
collector-base time constant
open emitter; IC = 100 µA; IE = 0
open base; IC = 1 mA; IB = 0
open collector; IE = 10 µA; IC = 0
IC = 4 mA; IB = 0.4 mA
VCE = 10 V; IC = 4 mA
VCB = 25 V; IE = 0
VCB = 25 V; IC = 0
VCE = 10 V; IC = 4 mA
VCB = 10 V; IE = ie = 0; f = 1 MHz
VCB = 10 V; IC = ic = 0; f = 1 MHz
VCE = 10 V; IC = 4 mA;
f = 100 MHz; Tamb = 25 °C
VCB = 10 V; IC = 4 mA;
f = 100 MHz; Tamb = 25 °C
VALUE
125
250
UNIT
K/W
K/W
MIN. MAX. UNIT
30 −
V
25 −
V
3
−
V
−
0.5 V
−
0.95 V
−
100 nA
−
100 nA
60 −
−
0.7 pF
0.35 0.65 pF
650 −
MHz
−
9
ps
1998 Aug 27
3
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