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MPSH10

NPN 1 GHz general purpose switching transistor

Philips Electronics 

Philips Semiconductors

NPN 1 GHz general purpose switching transistor

Product specification

MPSH10

FEATURES

• Low cost

• High power gain.

DESCRIPTION

Silicon NPN general purpose

transistor in a SOT54 (TO-92)

package. PNP complement is the

MPSH81.

PINNING

PIN

DESCRIPTION

1 collector

2 emitter

3 base

1

page

2

3

MSB033

Marking code: PSH10.

Fig.1 SOT54.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

Ptot

Tj

hFE

Cre

Crb

fT

rbCc

collector-base voltage

open emitter

collector-emitter voltage

open base

emitter-base voltage

open collector

total power dissipation

junction temperature

Ts = 25 °C; note 1

DC current gain

VCE = 10 V; IC = 4 mA

collector-emitter feedback capacitance

collector-base feedback capacitance

transition frequency

collector-base time constant

VCB = 10 V; IE = 0; f = 1 MHz

VCB = 10 V; IE = 0; f = 1 MHz

VCE = 10 V; IC = 4 mA;

f = 100 MHz; Tamb = 25 °C

VCE = 10 V; IC = 4 mA;

f = 100 MHz; Tamb = 25 °C

Note

1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body.

MIN.

−

−

−

−

−

60

−

0.35

650

MAX. UNIT

30

V

25

V

3

V

1

W

150 °C

−

0.7 pF

0.65 pF

−

MHz

−

9

ps

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

VCBO

VCEO

VEBO

IC

Ptot

Tstg

Tj

PARAMETER

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

total power dissipation

storage temperature

junction temperature

CONDITIONS

open emitter

open base

open collector

Ts = 25 °C; note 1

Note

1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body.

MIN.

−

−

−

−

−

−65

−

MAX.

30

25

3

40

1

+150

150

UNIT

V

V

V

mA

W

°C

°C

1998 Aug 27

2

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