MPS5179G Ver la hoja de datos (PDF) - ON Semiconductor

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Fabricante

MPS5179G

High Frequency Transistor

ON Semiconductor 

MPS5179

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Sustaining Voltage

(IC = 3.0 mAdc, IB = 0)

Collector −Base Breakdown Voltage

(IC = 0.001 mAdc, IE = 0)

Emitter −Base Breakdown Voltage

(IE = 0.01 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 15 Vdc, IE = 0)

(VCB = 15 Vdc, IE = 0, TA = 150°C)

ON CHARACTERISTICS

DC Current Gain

(IC = 3.0 mAdc, VCE = 1.0 Vdc)

Collector −Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

Base −Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

SMALL− SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product (Note 1)

(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz)

Collector−Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz)

Small Signal Current Gain

(IC = 2.0 mAdc, VCE = 6.0 Vdc, f = 1.0 kHz)

1. fT is defined as the frequency at which |hfe| extrapolates to unity.

Symbol

Min

Max

Unit

VCEO(sus)

12

−

Vdc

V(BR)CBO

20

−

Vdc

V(BR)EBO

2.5

−

Vdc

ICBO

mAdc

−

0.02

−

1.0

hFE

VCE(sat)

VBE(sat)

25

250

−

−

0.4

Vdc

−

1.0

Vdc

fT

900

2000

MHz

Ccb

−

1.0

pF

hfe

25

300

−

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