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MPS2222A Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS2222/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
2
BASE
MPS2222
MPS2222A*
*Motorola Preferred Device
MAXIMUM RATINGS
1
EMITTER
Rating
Symbol MPS2222 MPS2222A Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
30
40
60
75
5.0
6.0
600
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
TJ, Tstg
– 55 to +150
°C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
MPS2222
MPS2222A
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
MPS2222
MPS2222A
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MPS2222
MPS2222A
MPS2222A
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
MPS2222
MPS2222A
MPS2222
MPS2222A
MPS2222A
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MPS2222A
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IEBO
IBL
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min
Max
Unit
30
—
Vdc
40
—
60
—
Vdc
75
—
5.0
—
Vdc
6.0
—
—
10
nAdc
µAdc
—
0.01
—
0.01
—
10
—
10
—
100
nAdc
—
20
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996
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