MPS2222A Ver la hoja de datos (PDF) - General Semiconductor
Número de pieza
componentes Descripción
Fabricante
MPS2222A Datasheet PDF : 3 Pages
| |||
MPS2222A
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Collector-Base Breakdown Voltage
at IC = 10 mA, IE = 0
Collector-Emitter Breakdown Voltage(1)
at IC = 10 mA, IB = 0
Emitter-Base Breakdown Voltage
at IE = 10 mA, IC = 0
Collector-Emitter Saturation Voltage(1)
at IC = 150 mA, IB = 15 mA
at IC = 500 mA, IB = 50 mA
Base-Emitter Saturation Voltage(1)
at IC = 150 mA, IB = 15 mA
at IC = 500 mA, IB = 50 mA
Collector Cutoff Current
at VEB = 3 V, VCE = 60 V
Collector Cutoff Current
at VCB = 60 V, IE = 0
at VCB = 50 V, IE = 0, TA=125°C
Emitter Cutoff Current
at VEB = 3 V, IC = 0
Base Cutoff Current
at VCE = 60 V, VEB = 3.0 V
DC Current Gain
at VCE = 10 V, IC = 0.1 mA
at VCE = 10 V, IC = 1 mA
at VCE = 10 V, IC = 10 mA
at VCE = 10 V, IC = 10 mA, TA=-55°C
at VCE = 10 V, IC = 150 mA(1)
at VCE = 1.0 V, IC = 150 mA(1)
at VCE = 10 V, IC = 500 mA(1)
Input Impedance
at VCE = 10 V, IC = 1 mA, f = 1 kHz
at VCE = 10 V, IC = 10 mA, f = 1 kHz
Voltage Feedback Ratio
at VCE = 10 V, IC = 1 mA, f = 1 kHz
at VCE = 10 V, IC = 10 mA, f = 1 kHz
Current Gain-Bandwidth Product
at VCE = 20 V, IC = 20 mA, f = 100 MHz
Output Capacitance
at VCB = 10 V, f = 1 kHz, IE=0
Input Capacitance
at VEB = 0.5 V, f = 1 kHz, IC=0
NOTES
(1) Pulse test: Pulse width ² 300ms - Duty cycle ² 2%
SYMBOL
V(BR)CBO
MIN.
75
V(BR)CEO
40
V(BR)EBO
6.0
VCEsat
0.6
VCEsat
Ð
VBEsat
Ð
VBEsat
Ð
ICEX
Ð
ICBO
Ð
IEBO
IBL
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hie
hre
fT
COBO
CIBO
Ð
Ð
35
50
75
35
100
50
40
2.0
0.25
Ð
300
Ð
Ð
MAX.
Ð
Ð
Ð
0.3
1.0
1.2
2.0
10
0.01
10
100
20
Ð
Ð
Ð
Ð
300
Ð
Ð
8.0
1.25
8 ¥ 10-4
4 ¥ 10-4
Ð
8.0
25
UNIT
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nA
mA
nA
nA
Ð
Ð
Ð
Ð
Ð
Ð
Ð
kW
Ð
MHz
pF
pF
Share Link: 