TN3725A Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
TN3725A Datasheet PDF : 6 Pages
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Electrical Characteristics
Symbol
Parameter
NPN Switching Transistor
(continued)
TA= 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0
40
V(BR)CES
Collector-Emitter Breakdown Voltage IC = 10 µA, VBE = 0
60
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 µA, ICE = 0
60
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
6.0
ICBO
Collector Cutoff Current
ICES
Collector Cutoff Current
VCB = 60 V, IE = 0
VCB = 60 V, IE = 0, TA = 100°C
VCE = 80 V, VEB = 0
ON CHARACTERISTICS*
hFE
VCE(sat)
VBE(sat)
DC Current Gain
IC = 10 mA, VCE = 1.0 V
30
IC = 100 mA, VCE = 1.0 V
60
IC =100mA,VCE =1.0V,TA = -55°C
30
IC = 300 mA, VCE = 1.0 V
40
IC = 500 mA, VCE = 1.0 V
35
IC =500mA,VCE =1.0V,TA = -55°C
20
IC = 800 mA, VCE = 2.0 V
20
IC = 1.0 A, VCE = 5.0 V
25
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 300 mA, IB = 30 mA
IC = 500 mA, IB = 50 mA
IC = 800 mA, IB = 80 mA
IC = 1.0 A, IB = 100 mA
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 300 mA, IB = 30 mA
IC = 500 mA, IB = 50 mA
IC = 800 mA, IB = 80 mA
IC = 1.0 A, IB = 100 mA
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 50 mA, VCE = 10 V,
300
f = 100 MHz
Cobo
Output Capacitance
VCB = 10 V, IE = 0,
f = 1.0 MHz
Cibo
Input Capacitance
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
SWITCHING CHARACTERISTICS (except MMPQ3725)
ton
Turn-on Time
td
Delay Time
tr
Rise Time
toff
Turn-off Time
ts
Storage Time
tf
Fall Time
VCC = 30 V, VBE(off) = 3.8 V,
IC = 500 mA, IB1 = 50 mA
VCC = 30 V, IC = 500 mA
IB1 = IB2 = 50 mA
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
V
V
V
V
1.7
µA
120
µA
10
µA
150
0.25
V
0.26
V
0.4
V
0.52
V
0.8
V
0.95
V
0.76
V
0.86
V
1.1
V
1.2
V
1.5
V
1.7
V
MHz
10
pF
55
pF
35
ns
10
ns
30
ns
60
ns
50
ns
30
ns
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