TN3725A Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

TN3725A

NPN Switching Transistor

Fairchild Semiconductor 

Discrete POWER & Signal

Technologies

TN3725A

C

BE

TO-226

MMPQ3725

BE B

BE

E

B

E

C CC

CC

C

C

C

SOIC-16

NPN Switching Transistor

This device is designed for high speed core driver applications

up to collector currents of 1.0 A. Sourced from Process 25.

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol

Parameter

Value

VCEO

Collector-Emitter Voltage

40

VCBO

Collector-Base Voltage

60

VEBO

Emitter-Base Voltage

6.0

IC

Collector Current - Continuous

1.2

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units

V

V

V

A

°C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

PD

Total Device Dissipation

Derate above 25°C

RθJC

Thermal Resistance, Junction to Case

RθJA

Thermal Resistance, Junction to Ambient

Effective 4 Die

Each Die

Max

TN3725A

1.0

8.0

50

125

MMPQ3725

1.0

8.0

125

240

Units

W

mW/°C

°C/W

°C/W

°C/W

°C/W

© 1997 Fairchild Semiconductor Corporation

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