MMFT2406T1(2000) Ver la hoja de datos (PDF) - ON Semiconductor
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MMFT2406T1 Datasheet PDF : 8 Pages
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MMFT2406T1
Preferred Device
Power MOSFET
700 mA, 240 Volts
N–Channel SOT–223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, converters,
solenoid and relay drivers. The device is housed in the SOT–223
package which is designed for medium power surface mount
applications.
• Silicon Gate for Fast Switching Speeds
• High Voltage – 240 Vdc
• Low Drive Requirement
• The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering,
eliminating the possibility of damage to the die.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
Total Power Dissipation @ TA = 25°C
(Note 1.)
Derate above 25°C
VDS
VGS
ID
PD
240
Vdc
±20
Vdc
700 mAdc
1.5 Watts
12 mW/°C
Operating and Storage Temperature
Range
TJ, Tstg –65 to
°C
150
THERMAL CHARACTERISTICS
Thermal Resistance –
Junction–to–Ambient (surface mounted)
(Note 1.)
RθJA
83.3 °C/W
Lead Temperature for Soldering Purposes,
TL
1/16″ from case
Time in Solder Bath
260
°C
10
Sec
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
http://onsemi.com
700 mA
240 VOLTS
RDS(on) = 6.0 W
N–Channel
D
G
S
MARKING
DIAGRAM
1
2
3
4 TO–261AA
CASE 318E
STYLE 3
T2406
LWW
L
= Location Code
WW = Work Week
PIN ASSIGNMENT
4 Drain
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 2
123
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MMFT2406T1
MMFT2406T3
SOT–223 1000 Tape & Reel
SOT–223 4000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MMFT2406T1/D
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