MMDL101T1G(2010) Ver la hoja de datos (PDF) - ON Semiconductor
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MMDL101T1G Datasheet PDF : 3 Pages
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MMDL101T1G
TYPICAL CHARACTERISTICS
1.0
0.7
0.5
VR = 3.0 Vdc
0.2
0.1
0.07
0.05
0.02
MMBD110T1
0.01
30 40 50 60 70 80 90 100 110 120 130
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Reverse Leakage
100
10
TA = 85°C
TA = - 40°C
1.0
0.1
0.3
TA = 25°C
MMBD110T1
0.4
0.5
0.6
0.7
0.8
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.0
11
10
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
9
(Test Circuit Figure 5)
0.9
8
7
0.8
6
5
4
0.7
3
MMBD110T1
2
MMBD110T1
0.6
1
0
1.0
2.0
3.0
4.0
0.1 0.2
0.5
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
PLO, LOCAL OSCILLATOR POWER (mW)
Figure 3. Capacitance
Figure 4. Noise Figure
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
Figure 5. Noise Figure Test Circuit
NOTES ON TESTING AND SPECIFICATIONS
2. CC and CT are measured using a capacitance bridge
(Boonton Electronics Model 75A or equivalent).
3. Noise figure measured with diode under test in tuned diode
mount using UHF noise source and local oscillator (LO)
frequency of 1.0 GHz. The LO power is adjusted for
1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5.
http://onsemi.com
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