MMDL101 Ver la hoja de datos (PDF) - E-Tech Electronics LTD

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MMDL101

Schottky Barrier Diode

E-Tech Electronics LTD 

Schottky Barrier Diode

Schottky barrier diodes are designed primarily for high–efficiency

UHF and VHF detector applications. Readily available to many

other fast switching RF and digital applications.

• Very Low Capacitance — Less than 1.0 pF @ Zero Volts

• Low Noise Figure — 6.0 dB Typ @ 1.0 GHz

• Device Marking: 4M

MMDL101T1

1.0 pF SCHOTTKY

BARRIER DIODE

1

1

CATHODE

2

ANODE

MAXIMUM RATINGS

Symbol

VR

Rating

Reverse Voltage

Value

7.0

2

PLASTIC SOD– 323

CASE 477

Unit

Vdc

THERMAL CHARACTERISTICS

Symbol

PD

R θJA

T J , T stg

Characteristic

Total Device Dissipation FR–5 Board,*

T A = 25°C

Derate above 25°C

Thermal Resistance Junction to Ambient

Junction and Storage

Temperature Range

*FR–5 Minimum Pad

Max

200

1.57

635

–55 to+150

Device

MMDL101T1

ORDERING INFORMATION

Package

SOD–323

Shipping

3000 / Tape & Reel

Unit

mW

mW/°C

°C/W

°C

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Reverse Breakdown Voltage

(I R = 10 µA)

V (BR)R

7.0

Diode Capacitance

(V R = 0, f = 1.0MHz, Note 1)

CT

—

Reverse Leakage

(V R = 3.0 V)

IR

—

Noise Figure

(f = 1.0 GHz, Note 2)

NF

—

Forward Voltage

(I F = 10 mA)

VF

—

*Notes on Next Page

Typ

10

0.88

20

6.0

0.5

Max

—

1.0

250

—

0.6

Unit

Volts

pF

nAdc

dB

Vdc

S1–1/3

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