MMDF2N02E(2011) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
MMDF2N02E Datasheet PDF : 9 Pages
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MMDF2N02E
TYPICAL ELECTRICAL CHARACTERISTICS
7 VGS = 10 V
6 4.5 V
4.3 V
3.9 V
5 4.1 V
3.7 V
3.5 V
3.3 V
4
3.1 V
3
2.9 V
2
2.7 V
1
2.5 V
TJ = 25°C
0
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
7
VDS ≥ 10 V
6 TJ = 25°C
5
4
100°C
3
25°C
2
1
TJ = -55°C
0
1.5
2
2.5
3
3.5
4
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.6
ID = 3.5 A
0.5
TJ = 25°C
0.4
0.3
0.2
0.1
0
2
3
4
5
6
7
8
9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
2.0
VGS = 10 V
ID = 3.5 A
1.5
0.15
TJ = 25°C
VGS = 4.5
0.1
10 V
0.05
0
0
1
2
3
4
5
6
7
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
10000
VGS = 0 V
1000
TJ = 125°C
100°C
1.0
100
25°C
0.5
10
0
- 50 - 25
0
25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 5. On−Resistance Variation with
Temperature
1
5
10
15
20
25
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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