MMBV809LT1 Ver la hoja de datos (PDF) - E-Tech Electronics LTD

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MMBV809LT1

Silicon Tuning Diode

E-Tech Electronics LTD 

Silicon Tuning Diode

This device is designed for 900 MHz frequency control

and tuning applications. It provides solid–state reliability in

replacement of mechanical tuning methods.

• Controlled and Uniform Tuning Ratio

• Available in Surface Mount Package

• Available in 8 mm Tape and Reel

1

ANODE

(

3

CATHODE

MMBV809LT1

3

1

2

CASE 318–08, STYLE 8

SOT– 23 (TO–236AB)

MAXIMUM RATINGS(EACH DIODE)

Rating

Symbol

Reverse Voltage

VR

Forward Current

IF

Device Dissipation(1) @T A = 25°C

PD

Derate above 25°C

Junction Temperature

TJ

Storage Temperature Range

T stg

Value

20

20

225

1.8

+125

–55 to +150

Unit

Vdc

mAdc

mW

mW/°C

°C

°C

DEVICE MARKING

MMBV809LT1=5K

ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)

Characteristic

Symbol

Min

Reverse Breakdown Voltage

(IR=10µAdc)

Reverse Voltage Leakage Current

(VR=15Vdc)

V (BR)R

20

IR

—

Max

—

50

Unit

Vdc

nAdc

Device Type

CTDiode Capacitance

VR=2.0Vdc,f=1.0MHz

pF

Q,Figure of Merit

VR=3.0Vdc

f=500MHz

CR,Capacitance Ratio

C2/C8

f=1.0MHz(2)

Min

Typ

Max

Typ

MMBV809LT1

4.5

5.3

6.1

75

1. FR-5 Board 1.0 x 0.75 x 0.62 in.

2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 vdc

Min

Max

1.8

2.6

I5–1/2

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