MMBT5551LT1 Ver la hoja de datos (PDF) - Tiger Electronic
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MMBT5551LT1 Datasheet PDF : 3 Pages
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TIGER ELECTRONIC CO.,LTD
MMBT5551LT1
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT5551LT1 is designed for general purpose applications
requiring high Breakdown Voltages.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature..................................................................................................-55+150°C
Junction Temperature............... ............................................................ ..........+150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................250 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage. .......................................................................................180 V
VCEO Collector to Emitter Voltage. ....................................................................................160 V
VEBO Emitter to Base Voltage ...............................................................................................6 V
IC Collector Current ........................................................................ .................................600mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
180
-
BVCEO
160
-
BVEBO
6
-
ICBO
-
-
IEBO
-
-
VCE(sat)1
-
-
VCE(sat)2
-
-
VBE(sat)1
-
-
VBE(sat)2
-
-
hFE1
80
-
hFE2
80
-
hFE3
30
-
fT
100
-
Cob
-
-
Max.
-
-
-
50
50
0.15
0.2
1
1
-
250
-
300
6
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=100uA
IC=1.0mA
IE=10uA
VCB=120V
VEB=4V
IC=10mA, IB=1.0mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
IC=10mA, VCE=10V, f=100MHz
VCB=10V, f=1MHz
TIGER ELECTRONIC CO.,LTD
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