MMBT5401 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor
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Fabricante
MMBT5401 Datasheet PDF : 4 Pages
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Production specification
PNP General Purpose Transistor
MMBT5401
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX. UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=-100μA,IE=0
-160
V(BR)CEO
Collector-emitter breakdown voltage IC=-1mA,IB=0
-150
V(BR)EBO
Emitter-base breakdown voltage
IE=-10μA,IC=0
-5
ICBO
collector cut-off current
IE = 0; VCB = -120V
-
-50 nA
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cobo
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
transition frequency
Output capacitance
IC = 0; VEB = -3V
VCE = -5V; IC= -1mA
VCE = -5V;IC = -10mA
VCE = -5V;IC = -50 mA
IC = -10 mA; IB = -1 mA
IC = -50 mA; IB = -5 mA
IC = -10 mA; IB = -1 mA
IC = -50 mA; IB = -5 mA
IC = -10mA; VCE = -10V;
f = 100MHz
IE=0; VCB= -10V,
f = 1.0MHz
-
-50 nA
50
-
100 300
50
-
-
-0.2
-0.5
V
-
-1
-1
V
100 300 MHz
6.0 pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
C075
Rev.A
www.gmicroelec.com
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