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MMBT4403 Datasheet PDF : 3 Pages
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MMBT4403
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
DC Current Gain
–VCE = 1V, –IC = 0.1mA
30
—
–VCE = 1V, –IC = 1mA
60
—
hFE
–VCE = 1V, –IC = 10mA
100
—
–VCE = 2V, –IC = 150mA(1) 100
—
–VCE = 2V, –IC = 500mA(1)
20
—
Collector-Base Breakdown Voltage
–V(BR)CBO –IC = 0.1mA, IE = 0
40
—
Collector-Emitter Breakdown Voltage(1)
–V(BR)CEO
–IC = 1mA, IB = 0
40
—
Emitter-Base Breakdown Voltage
–V(BR)EBO –IE = 0.1mA, IC = 0
5.0
—
Collector-Emitter Saturation Voltage(1)
–VCEsat
–IC = 150mA, –IB = 15mA
–IC = 500mA, –IB = 50mA
—
—
—
—
Base-Emitter Saturation Voltage(1)
–VBEsat
–IC = 150mA, –IB = 15mA
–IC = 500mA, –IB = 50mA
0.75
—
—
—
Collector-Emitter Cut-off Current
–ICEV –VEB = 0.4V, –VCE = 35V
—
—
Emitter-Base Cut-off Current
–IBEV –VEB = 0.4V, –VCE = 35V
—
—
Current Gain-Bandwidth Product
fT
–VCE = 10V, –IC = 20mA
f = 100MHz
200
—
Collector-Base Capacitance
CCBO –VCB = 10V, IE = 0, f = 1MHz —
—
Emitter-Base Capacitance
Input Impedance
CEBO –VEB = 0.5V, IC = 0, f = 1MHz —
—
hie
–VCE = 10V, –IC = 1mA,
f = 1kHz
1.5
—
Small Signal Current Gain
hfe
–VCE = 10V, –IC = 1mA,
f = 1kHz
60
—
Voltage Feedback Ratio
hre
–VCE = 10V, –IC = 1mA,
f = 1kHz
0.1 • 10-4
—
Output Admittance
hoe
–VCE = 10V, –IC = 1mA,
f = 1kHz
1.0
—
Notes: (1) Pulse test: pulse width ≤ 300 µs duty cycle ≤ 2%
Max
—
—
—
300
—
—
—
—
0.40
0.75
0.95
1.30
100
100
—
8.5
30
15
500
8 • 10-4
100
Unit
—
V
V
V
V
V
nA
nA
MHz
pF
pF
kΩ
—
—
µS
www.vishay.com
2
Document Number 88227
10-May-02
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