MMBT4401LT1 Ver la hoja de datos (PDF) - Willas Electronic Corp.
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MMBT4401LT1 Datasheet PDF : 6 Pages
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General Purpose Transistor
MMBT4401LT1
• We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
Device
MMBT4401LT1
Marking
2X
Shipping
3000/Tape & Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
40
60
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
MMBT4401LT1 = 2X
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
V (BR)CEO
(I C = 1.0 mAdc, I B = 0)
40
Collector–Base Breakdown Voltage
V (BR)CBO
(I C = 0.1 mAdc, I E = 0)
60
Emitter–Base Breakdown Voltage
V (BR)EBO
(I E = 0.1 mAdc, I C = 0)
6.0
Base Cutoff Current
I BEV
(V CE = 35 Vdc, V EB = 0.4 Vdc)
—
Collector Cutoff Current
I CEX
(V CE = 35 Vdc, V EB = 0.4 Vdc)
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
Max
Unit
Vdc
—
Vdc
—
Vdc
—
µAdc
0.1
µAdc
0.1
2012-11
WILLAS ELECTRONIC CORP.
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