MMBT4401LT1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
ON CHARACTERISTICS(3)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base – Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
hFE
20
40
80
100
40
VCE(sat)
—
—
VBE(sat)
0.75
—
Current – Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small – Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
fT
250
Ccb
—
Ceb
—
hie
1.0
hre
0.1
hfe
40
hoe
1.0
Delay Time
Rise Time
(VCC = 30 Vdc, VEB = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
v v 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
td
—
tr
—
ts
—
tf
—
Max
Unit
—
—
—
—
300
—
Vdc
0.4
0.75
Vdc
0.95
1.2
MHz
—
pF
6.5
pF
30
kΩ
15
X 10– 4
8.0
—
500
mmhos
30
15
ns
20
225
ns
30
+16 V
0
– 2.0 V
SWITCHING TIME EQUIVALENT TEST CIRCUITS
1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%
< 2.0 ns
1.0 kΩ
+ 30 V
200 Ω
CS* < 10 pF
+16 V
0
–14 V
1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%
1.0 kΩ
< 20 ns
+ 30 V
200 Ω
CS* < 10 pF
Figure 1. Turn–On Time
Scope rise time < 4.0 ns
– 4.0 V
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 2. Turn–Off Time
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data