MMBT4401 Ver la hoja de datos (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

MMBT4401

TRANSISTOR(NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

MMBT4401

TRANSISTOR(NPN)

FEATURES

Switching transistor

MARKING: MMBT4401=2X

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

RӨJA

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power dissipation

Junction Temperature

Storage Temperature

Thermal Resistance, junction to Ambient

60

40

6

600

0.3

150

-55to +150

357

V

V

V

mA

W

℃

℃

℃/mW

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Symbol Test conditions

V(BR)CBO IC= 100μA, IE=0

V(BR)CEO IC= 1mA, IB=0

V(BR)EBO IE= 100μA, IC=0

ICBO

VCB=50 V, IE=0

ICEO

VCE=30 V, IB=0

IEBO

VEB=5V, IC=0

hFE

VCE=1V, IC=150mA

VCE(sat) IC=150mA, IB=15mA

VBE(sat)

fT

IC= 150mA, IB=15mA

VCE= 10V, IC= 20mA

f = 100MHz

MIN MAX UNIT

60

V

40

V

6

V

0.1

μA

0.1

μA

0.1

μA

100 300

0.4

V

0.95

V

250

MHz

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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