MMBT4401(2015) Ver la hoja de datos (PDF) - Diotec Semiconductor Germany

Número de pieza

componentes Descripción

Fabricante

MMBT4401
(Rev.:2015)

Surface Mount General Purpose Si-Epi-Planar Transistors

Diotec Semiconductor Germany  

MMBT4401

Characteristics (Tj = 25°C)

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

VCEsat

VCEsat

Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VBEsat

VBEsat

VCE = 35 V, VEB = 0,4 V

ICBV

Emitter-Base cutoff current – Emitter-Basis-Reststrom

VCE = 35 V, VEB = 0,4 V

IEBV

Gain-Bandwidth Product – Transitfrequenz

IC = 20 mA, VCE = 10 V, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 5 V, IE = ie = 0, f = 1 MHz

CCBO

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

Switching times – Schaltzeiten (between 10% and 90% levels)

delay time

rise time

VCC = 30 V, VEB = 2 V

td

IC = 150 mA, IB1 = 15 mA

tr

storage time

fall time

VCC = 30 V, IC = 150 mA

ts

IB1 = IB2 = 15 mA

tf

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

Marking - Stempelung

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

–

–

0.40 V

–

–

0.75 V

0.75 V

–

0.95 V

–

–

1.2 V

–

–

100 nA

–

–-

100 nA

250 MHz

–

–

–

–

6.5 pF

–

–

30 pf

–

–

15 ns

–

–

20 ns

–

–

225 ns

–

–

30 ns

< 420 K/W 1)

MMBT4403

MMBT4401 = 2X

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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