MMBT4401 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor
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MMBT4401 Datasheet PDF : 4 Pages
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BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
MMBT4401
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
60
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=B 0
40
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
6
V
Collector cut-off current
ICBO
VCB=50V,IE=0
0.1 μA
Collector cut-off current
ICEO
VCE=35V,IE=0
0.1 μA
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
VBE(sat)
fT
Cob
VEB=5V,IC=0
VCE=1V,IC=0.1mA
VCE=1V,IC=1.0mA
VCE=1V,IC=10mA
VCE=1V,IC=150mA
VCE=2V,IC=500mA
IC=150mA, IB=B 15mA
IC=500mA, IB=B 50mA
IC=150mA, IB=B 15mA
IC=500mA, IB=B 50mA
VCE=10V, IC= 20mA
f=100MHz
VCB=5V,IE=0,f=1MHz
0.1 μA
20
40
80
100
300
40
0.4
V
0.75
0.75 0.95
V
1.2
250
MHz
6.5 pF
Document number: BL/SSSTC073
Rev.A
www.galaxycn.com
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