MMBT3904 Ver la hoja de datos (PDF) - NXP Semiconductors.
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MMBT3904 Datasheet PDF : 10 Pages
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NXP Semiconductors
NPN switching transistor
Product data sheet
MMBT3904
500
handbook, halfpage
h FE
400
(1)
300
(2)
200
(3)
100
0
10 −1
1
10
MGU821
102
103
IC (mA)
VCE = 1 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.2 DC current gain; typical values.
250
handbook, halfpage
IC
(mA)
(1) (2) (3) (4) (5) (6) (7)
200
MGU822
150
(8)
(9)
100
(10)
50
0
0
2
Tamb = 25 °C.
(1) IB = 5 mA.
(2) IB = 4.5 mA.
(3) IB = 4 mA.
(4) IB = 3.5 mA.
4
6
(5) IB = 3 mA.
(6) IB = 2.5 mA.
(7) IB = 2 mA.
(8) IB = 1.5 mA.
8
10
VCE (V)
(9) IB = 1 mA.
(10) IB = 0.5 mA.
Fig.3 Collector current as a function of
collector-emitter voltage.
1200
handbook, halfpage
VBE
(mV)
1000
(1)
800
(2)
600
(3)
400
MGU823
200
10 −1
1
VCE = 1 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
10
102
103
IC (mA)
Fig.4 Base-emitter voltage as a function of
collector current.
2004 Feb 03
1200
handbook, halfpage
VBEsat
(mV)
1000
800
600
MGU824
(1)
(2)
(3)
400
200
10 −1
1
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
10
102
103
IC (mA)
Fig.5 Base-emitter saturation voltage as a
function of collector current.
5
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