MMBT3904 Ver la hoja de datos (PDF) - NXP Semiconductors.
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Fabricante
MMBT3904 Datasheet PDF : 10 Pages
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NXP Semiconductors
NPN switching transistor
Product data sheet
MMBT3904
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
F
PARAMETER
CONDITIONS
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
IE = 0; VCB = 30 V
IC = 0; VEB = 6 V
VCE = 1 V; see Fig.2; note 1
IC = 0.1 mA
IC = 1 mA
IC = 10 mA
IC = 50 mA
IC = 100 mA
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 5 mA
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 5 mA
IE = Ie = 0; VCB = 5 V; f = 1 MHz
IC = Ic = 0; VBE = 500 mV;
f = 1 MHz
transition frequency
IC = 10 mA; VCE = 20 V;
f = 100 MHz
noise figure
IC = 100 µA; VCE = 5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
MIN.
−
−
60
80
100
60
30
−
−
650
−
−
−
300
−
Switching times (between 10% and 90% levels); see Fig.3
td
delay time
tr
rise time
ts
storage time
tf
fall time
ICon = 10 mA; IBon = 1 mA;
−
IBoff = −1 mA
−
−
−
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
50
50
−
−
300
−
−
200
300
850
950
4
8
−
5
35
35
200
50
UNIT
nA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
ns
ns
ns
ns
2004 Feb 03
4
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