MMBT3904 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

MMBT3904

NPN Silicon Switching Transistors

Infineon Technologies 

DC current gain hFE = ƒ(IC)

VCE = 1 V, normalized

10 3

125 °C

25 °C

10 2

-55 °C

SMBT3904...MMBT3904

Saturation voltage IC = ƒ(VBEsat; VCEsat)

hFE = 10

2

mA

Ι C 10 2

5

V CE

EHP00756

V BE

10 1

5

10

1

10

-5

10 -4

10 -3

10 -2

10 -1 mA10 0

IC

Collector-base capacitance Ccb = ƒ(VCB)

Emitter-base capacitance Ceb = ƒ(VEB)

10 0

0

0.2 0.4 0.6 0.8 1.0 V 1.2

VBE sat , VCE sat

Total power dissipation Ptot = ƒ(TS)

SMBT3904/MMBT3904

9

pF

7

6

5

4

3

2

1

0

0

CEB

CCB

4

8

12

16 A 22

VCB(VEB

360

mW

300

270

240

210

180

150

120

90

60

30

0

0 15 30 45 60 75 90 105 120 °C 150

TS

5

2012-08-21

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