MMBT3904 Ver la hoja de datos (PDF) - Infineon Technologies

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componentes Descripción

Fabricante

MMBT3904

NPN Silicon Switching Transistors

Infineon Technologies 

NPN Silicon Switching Transistors

• High DC current gain: 0.1 mA to 100 mA

• Low collector-emitter saturation voltage

• For SMBT3904S:

Two (galvanic) internal isolated transistors

with good matching in one package

• Complementary types: SMBT3906... MMBT3906

• SMBT3904S: For orientation in reel

see package information below

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

SMBT3904...MMBT3904

Type

SMBT3904/MMBT3904

SMBT3904S

Marking

Pin Configuration

Package

s1A 1=B 2=E 3=C -

-

-

SOT23

s1A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Total power dissipation-

TS ≤ 71°C, SOT23, SMBT3904

TS ≤ 115°C, SOT363, SMBT3904S

Junction temperature

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point1)

SMBT3904/MMBT3904

SMBT3904S

Symbol

VCEO

VCBO

VEBO

IC

Ptot

Tj

Tstg

Symbol

RthJS

Value

40

60

6

200

330

250

150

-65 ... 150

Value

≤ 240

≤ 140

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

Unit

V

mA

mV

°C

Unit

K/W

1

2012-08-21

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