DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MMBT3904 Ver la hoja de datos (PDF) - General Semiconductor

Número de pieza
componentes Descripción
Fabricante
MMBT3904
GE
General Semiconductor GE
MMBT3904 Datasheet PDF : 3 Pages
1 2 3
MMBT3904
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Voltage Feedback Ratio
VCE = 10 V, IC = 1 mA, f = 1 kHz
SYMBOL
hre
MIN.
0.5 . 10Ð4
MAX.
8 . 10Ð4
UNIT
Ð
Small Signal Current Gain
at VCE = 10 V, IC = 1 mA, f = 1 kHz
hfe
100
400
Ð
Output Admittance
at VCE = 1 V, IC = 1 mA, f = 1 kHz
hoe
1
40
mS
Noise Figure
at VCE = 5 V, IC = 100 mA, RG = 1 kW,
f = 10 É 15000 Hz
NF
Ð
5
dB
Delay Time (see Fig. 1)
at IB1 = 1 mA, IC = 10 mA
td
Ð
35
ns
Rise Time (see Fig. 1)
at IB1 = 1 mA, IC = 10 mA
tr
Ð
35
ns
Storage Time (see Fig. 2)
at ÐIB1 = IB2 = 1 mA, IC = 10 mA
ts
Ð
200
ns
Fall Time (see Fig. 2)
at ÐIB1 = IB2 = 1 mA, IC = 10 mA
tf
Ð
50
ns
Fig. 1: Test circuit for delay and rise time
* total shunt capacitance of test jig and connectors
0.30 (7.5)
0.12 (3)
Fig. 2: Test circuit for storage and fall time
* total shunt capacitance of test jig and connectors
0.59 (15)
0.03 (0.8)
0.47 (12)
0.2 (5)
.04 (1) .08 (2)
.04 (1)
.08 (2)
0.06 (1.5)
0.20 (5.1)
Dimensions in inches and (millimeters)

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]