MMBT3904 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor
Número de pieza
componentes Descripción
Fabricante
MMBT3904 Datasheet PDF : 4 Pages
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Production specification
NPN SWITCHING TRANSISTOR
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
Pb
Lead-free
(MMBT3906).
z Collector Current Capability ICM =200mA.
z Collector-emitter Voltage VCEO=40V.
MMBT3904
APPLICATIONS
z General switching and amplification
ORDERING INFORMATION
Type No.
Marking
MMBT3904
1AM
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Value
UNIT
VCBO
collector-base voltage
open emitter
60
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
IC
emitter-base voltage
collector current (DC)
open collector
6
V
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb≤25°C
250
mW
Tstg
storage temperature
-65 to +150 °C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
-65 to +150 °C
C061
Rev.A
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