MMBT2907A Ver la hoja de datos (PDF) - Vaishali Semiconductor

Número de pieza

componentes Descripción

Fabricante

MMBT2907A

Small Signal Transistor (PNP)

Vaishali Semiconductor 

MMBT2907A

Vishay Semiconductors

formerly General Semiconductor

Electrical Characteristics (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Turn-ON Time

ton

–IB1 = 15mA, –IC = 150mA

–VCC = 30V

—

—

45

ns

Delay Time

td

–IB1 = 15mA, –IC = 150mA

–VCC = 30V

—

—

10

ns

Rise Time

tr

–IB1 = 15mA, –IC = 150mA

–VCC = 30V

—

—

40

ns

Turn-OFF Time

toff

–IB1 = 15mA, –IC = 150mA

–VCC = 6.0V

—

—

100

ns

Storage Time

ts

–IB1 = –IB2 = 15mA

–IC = 150mA , –VCC = 6.0V

—

—

80

ns

Fall Time

tf

–IB1 = –IB2 = 15mA

–IC = 150mA , –VCC = 6V

—

—

30

ns

Switching Time Equivalent Test Circuit

Figure 1 - Delay and Rise Time Test Circuit

INPUT

Zo = 50 Ω

PRF = 150 PPS

Rise Time ≤ 2.0 ns

P.W. < 200 ns

0

-16 V

200ns

1.0 k Ω

50 Ω

-30V

200 Ω

To Oscilloscope with

Rise Time ≤ 5.0 ns

Figure 2 - Storage and Fall Time Test Circuit

INPUT

Zo = 50 Ω

PRF = 150 PPS

Rise Time ≤ 2.0 ns

P.W. < 200 ns

0

-30 V

200ns

+15 V

1.0 k Ω

1.0 k Ω

50 Ω

-6.0 V

37 Ω

To Oscilloscope with

Rise Time ≤ 5.0 ns

Document Number 88223

10-May-02

www.vishay.com

3

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