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MMBT2907A Datasheet PDF : 3 Pages
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MMBT2907A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DC Current Gain
–VCE = 10V, –IC = 0.1mA
75
—
—
–VCE = 10V, –IC = 1mA
100
—
—
hFE
–VCE = 10V, –IC = 10mA
100
—
—
—
–VCE = 10V, –IC = 150mA(1) 100
—
300
–VCE = 10V, –IC = 500mA(1)
50
—
—
Collector Cutoff Current
–ICEV –VEB = 0.5V, –VCE = 30V
—
—
50
nA
Collector Cutoff Current
–ICBO
–VCB = 50V, IE = 0
–VCB = 50V, IE = 0,TA = 125°C
—
—
—
—
0.01
10
µA
Emitter-Base Cutoff Current
–IBL –VEB = 0.5V, –VCE = 30V
—
—
50
nA
Collector-Emitter Saturation Voltage(1)
–VCEsat
–IC = 150mA, –IB = 15mA
–IC = 500mA, –IB = 50mA
—
—
—
0.4
—
1.6
V
Base-Emitter Saturation Voltage(1)
–VBEsat
–IC = 150mA, –IB = 15mA
–IC = 500mA, –IB = 50mA
—
—
—
—
1.3
2.6
V
Collector-Emitter Breakdown Voltage(1)
–V(BR)CEO –IC = 10mA, IB = 0
60
—
—
V
Collector-Base Breakdown Voltage
–V(BR)CBO
–IC = 10µA, IE = 0
60
—
—
V
Emitter-Base Breakdown Voltage
–V(BR)EBO
–IE = 10µA, IC = 0
5.0
—
—
V
Current Gain-Bandwidth Product
fT
–VCE = 20V, –IC = 50mA
f = 100MHz
200
—
—
MHz
Output Capacitance
Cobo
–VCB = 10V, f = 1.0MHz
IE = 0
—
—
8
pF
Input Capacitance
Cibo
–VEB = 2.0V, f = 1.0MHz
IC = 0
—
—
30
pF
Note:
(1) Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2.0%
www.vishay.com
2
Document Number 88223
10-May-02
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