MMBT2369AT3 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

MMBT2369AT3

Switching Transistors NPN Silicon

ON Semiconductor 

MMBT2369LT1, MMBT2369ALT1

200

TJ = 125°C

VCE = 1 V

100

75°C

25°C

-15°C

TJ = 25°C and 75°C

50

-55°C

20

1

2

5

10

20

IC, COLLECTOR CURRENT (mA)

50

100

Figure 13. Minimum Current Gain Characteristics

1.4

βF = 10

1.2 TJ = 25°C

1.0

0.8

MAX VBE(sat)

MIN VBE(sat)

0.6

0.4

MAX VCE(sat)

0.2

1

2

5

10

20

50

100

IC, COLLECTOR CURRENT (mA)

Figure 14. Saturation Voltage Limits

1.0

0.5

θVC for VCE(sat)

0

APPROXIMATE DEVIATION

FROM NOMINAL

-0.5

-55°C to +25°C 25°C to 125°C

θVC ±0.15 mV/°C ±0.15 mV/°C

-1.0 θVB ±0.4 mV/°C ±0.3 mV/°C

-1.5

θVB for VBE(sat)

-2.0

(25°C to 125°C)

(-55°C to +25°C)

(-55°C to +25°C)

(25°C to 125°C)

-2.5

0

10 20 30 40 50 60 70 80 90 100

IC, COLLECTOR CURRENT (mA)

Figure 15. Typical Temperature Coefficients

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