MMBT2369AT3 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

MMBT2369AT3

Switching Transistors NPN Silicon

ON Semiconductor 

MMBT2369LT1, MMBT2369ALT1

500

VCC = 10 V

25°C

200

100°C

100

QT, βF = 10

QT, βF = 40

50

QA, VCC = 10 V

20

QA, VCC = 3 V

+5 V

t1

∆V

0

< 1 ns

PULSE WIDTH (t1) = 5 µs

DUTY CYCLE = 2%

270

3V

10 pF MAX

4.3 k

VALUES REFER TO

IC = 10 mA TEST

Cs* < 4 pF

Figure 9. QT Test Circuit

10

1

2

5

10

20

50 100

IC, COLLECTOR CURRENT (mA)

Figure 8. Maximum Charge Data

C

COPT

C < COPT

C=0

TIME

Figure 10. Turn–Off Waveform

+6 V

t1

0

-4 V

< 1 ns

PULSE WIDTH (t1) = 300 ns

DUTY CYCLE = 2%

980

10 V

500

Cs* < 3 pF

Figure 11. Storage Time Equivalent Test Circuit

1.0

0.8

0.6

0.4

0.2

0.02

IC = 3 mA

IC = 10 mA

IC = 30 mA

IC = 50 mA

IC = 100 mA

TJ = 25°C

0.05

0.1

0.2

0.5

1

2

IB, BASE CURRENT (mA)

5

10

20

Figure 12. Maximum Collector Saturation Voltage Characteristics

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