MMBT2369A Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

MMBT2369A

NPN General Purpose Amplifier

Galaxy Semi-Conductor 

Production specification

NPN General Purpose Amplifier

MMBT2369A

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=10μA IE=0

40

V

Collector-emitter breakdown

voltage

V(BR)CEO IC=10mA IB=0

15

V

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

DC current gain

Collector-emitter saturation

voltage

Base-emitter saturation voltage

Output capacitance

Storage time

Turn-on time

Turn-off time

V(BR)EBO

ICBO

ICES

hFE

VCE(sat)

VBE(sat)

Cobo

tS

ton

toff

IE=10μA IC=0

VCB=20V IE=0

VCE=20V,VBE=0

VCE=1.0V IC=10mA

VCE=0.35V IC=10mA

VCE=0.4V IC=30mA

VCE=1.0V IC=100mA

IC=10mA IB=1.0mA

IC=30mA IB=3.0mA

IC=100mA IB=10mA

IC=10mA IB=1.0mA

IC=30mA IB=3.0mA

IC=100mA IB=10mA

VCB=5V,IE=0.f=1.0MHz

IB1=IB2=IC=10mA

VCC=3V,IC=10mA,

IB1=3mA

VCC=3V,IC=10mA,

IB1=3mA,IB2=1.5mA

4.5

40

30

20

0.7

5.0

8.0

10

V

0.4 μA

0.4 μA

120

0.2

0.25 V

0.5

0.85

1.15 V

1.6

4.0 pF

13 ns

12 ns

18 ns

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

C115

Rev.A

www.gmicroelec.com

2

Share Link: