MMBT2222AWT1G Ver la hoja de datos (PDF) - ON Semiconductor
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MMBT2222AWT1G Datasheet PDF : 6 Pages
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MMBT2222AWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 1)
DC Current Gain (Note 1)
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector −Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
Min
Max
Unit
40
−
Vdc
75
−
Vdc
6.0
−
Vdc
−
20
nAdc
−
10
nAdc
HFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
−
35
−
50
−
75
−
100
300
40
−
Vdc
−
0.3
−
1.0
Vdc
0.6
1.2
−
2.0
300
−
MHz
−
8.0
pF
−
30
pF
0.25
−
1.25
kW
4.0 X 10− 4
75
375
−
25
200 mmhos
−
4.0
dB
td
−
10
ns
tr
−
25
ts
−
225
ns
tf
−
60
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