MMBT2222AWT1 Ver la hoja de datos (PDF) - ON Semiconductor
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MMBT2222AWT1 Datasheet PDF : 6 Pages
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MMBT2222AWT1
Preferred Device
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−323/SC−70 package which
is designed for low power surface mount applications.
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
Value
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
TA = 25°C
PD
150
mW
Thermal Resistance, Junction−to−Ambient RqJA
833
°C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
P1 M G
G
1
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
P1 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT2222AWT1 SC−70 3000/Tape & Reel
MMBT2222AWT1G SC−70 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MMBT2222AWT1/D
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