MMBT2222AWT1G(2010) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
MMBT2222AWT1G Datasheet PDF : 6 Pages
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MMBT2222AWT1
1
IC/IB = 10
150°C
0.1
−55°C
25°C
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
1.3
1.2
IC/IB = 10
1.1
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
1.2
1.1 VCE = 1 V
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 13. Base Emitter Voltage vs. Collector
Current
+0.5
0
RqVC for VCE(sat)
- 0.5
- 1.0
- 1.5
- 2.0
RqVB for VBE
- 2.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 14. Temperature Coefficients
10
1
Thermal Limit
100 ms
1s
10 ms
1 ms
0.1
0.01
Single Pulse Test
0.001 @ TA = 25°C
0.01
0.1
1
10
100
VCE (Vdc)
Figure 15. Safe Operating Area
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