SMMBT2222AWT1G(2018) Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

SMMBT2222AWT1G
(Rev.:2018)

General Purpose Transistor

ON Semiconductor 

MMBT2222AWT1G, SMMBT2222AWT1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 1)

(IC = 10 mAdc, IB = 0)

V(BR)CEO

40

Vdc

−

Collector −Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

75

Vdc

−

Emitter −Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

Vdc

6.0

−

Base Cutoff Current

(VCE = 60 Vdc, VEB = 3.0 Vdc)

IBL

nAdc

−

20

Collector Cutoff Current

(VCE = 60 Vdc, VEB = 3.0 Vdc)

ICEX

−

nAdc

10

ON CHARACTERISTICS (Note 1)

DC Current Gain (Note 1)

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 150 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

HFE

−

35

−

50

−

75

−

100

300

40

−

Collector −Emitter Saturation Voltage (Note 1)

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

−

−

Vdc

0.3

1.0

Base −Emitter Saturation Voltage (Note 1)

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

Vdc

0.6

1.2

−

2.0

SMALL− SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT

MHz

300

−

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

pF

8.0

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−

pF

30

Input Impedance

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hie

kW

0.25

1.25

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hre

X 10− 4

−

4.0

Small −Signal Current Gain

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hfe

−

75

375

Output Admittance

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hoe

mmhos

25

200

Noise Figure

(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz)

NF

dB

−

4.0

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,

td

IC = 150 mAdc, IB1 = 15 mAdc)

tr

−

10

ns

−

25

Storage Time

Fall Time

(VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

ts

tf

−

225

ns

−

60

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

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