SMMBT2222AWT1G(2018) Ver la hoja de datos (PDF) - ON Semiconductor
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SMMBT2222AWT1G Datasheet PDF : 8 Pages
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MMBT2222AWT1G,
SMMBT2222AWT1G
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−323/SC−70 package which
is designed for low power surface mount applications.
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
Value
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
TA = 25°C
PD
150
mW
Thermal Resistance, Junction−to−Ambient RqJA
280
°C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
SC−70
CASE 419
STYLE 3
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
P1 MG
G
1
P1
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping†
MMBT2222AWT1G
SMMBT2222AWT1G
SC−70
(Pb−Free)
SC−70
(Pb−Free)
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
1
July, 2018 − Rev. 8
Publication Order Number:
MMBT2222AWT1/D
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