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MMBT2222A Ver la hoja de datos (PDF) - General Semiconductor

Número de pieza
componentes Descripción
Fabricante
MMBT2222A
GE
General Semiconductor GE
MMBT2222A Datasheet PDF : 3 Pages
1 2 3
MMBT2222A
Small Signal Transistors (NPN)
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Collector Base Time Constant
rbCC
IE = 20 mA, VCB = 20 V,
f = 31.8 MHz
150
ps
Delay Time (see fig. 1)
td
IB1 = 15 mA, IC = 150 mA,
VCC = 30V, VBE = -0.5 V
10
ns
Rise Time (see fig. 1)
tr
IB1 = 15 mA, IC = 150 mA,
VCC = 30V, VBE = -0.5 V
25
ns
Storage Time (see fig. 2)
ts
IB1 = IB2 = 15 mA,
IC = 150 mA, VCC = 30V
225
ns
Fall Time (see fig. 2)
tf
IB1 = IB2 = 15 mA,
IC = 150 mA, VCC = 30V
60
ns
Switching Time Equivalent Test Circuit
Figure 1. Turn-ON Time
+16 V
0
-2 V
1.0 to 100 µs, DUTY CYCLE 2%
1k
< 2 ns
+30V
200
CS* < 10 pF
Scope rise time < 4ns
*Total shunt capacitance of test jig,
connectors and oscilloscope
Figure 2. Turn-OFF Time
+16 V
0
-14 V
1.0 to 100 µs, DUTY CYCLE 2%
< 20 ns
1k
-4 V
+30V
200
CS* < 10 pF

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