MMBF170LT1(2004) Ver la hoja de datos (PDF) - ON Semiconductor
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MMBF170LT1 Datasheet PDF : 4 Pages
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MMBF170LT1
Power MOSFET
500 mA, 60 V
N−Channel SOT−23
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Drain−Gate Voltage
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)
Drain Current − Continuous
− Pulsed
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 0.75 0.062 in.
Symbol
VDSS
VDGS
VGS
VGSM
ID
IDM
Symbol
PD
RqJA
TJ, Tstg
Value Unit
60
Vdc
60
Vdc
± 20
Vdc
± 40
Vpk
0.5
Adc
0.8
Max Unit
225
1.8
556
−55 to
+150
mW
mW/°C
°C/W
°C
http://onsemi.com
500 mA, 60 V
RDS(on) = 5 W
N−Channel
3
1
2
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM
6Z
W
6Z
= Device Code
W
= Work Week
PIN ASSIGNMENT
3
Drain
© Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 4
Gate 1
2 Source
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 2 of this data sheet.
1
Publication Order Number:
MMBF170LT1/D
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