MMBD1404 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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MMBD1404 Datasheet PDF : 5 Pages
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High Voltage General Purpoise Diode
(continued)
Electrical Characteristics
Symbol
BV
IR
Parameter
Breakdown Voltage
Reverse Current
VF
Forward Voltage
CO
Diode Capacitance
TRR
Reverse Recovery Time
TA = 25°C unless otherwise noted
Test Conditions
IR = 100 µA
VR = 120 V
VR = 175 V
IF = 10 mA
IF = 50 mA
IF = 200 mA
IF = 300 mA
VR = 0, f = 1.0 MHz
IF = IR = 30 mA,
IRR = 1.0 mA, RL = 100Ω
Min
200
760
Max
40
100
800
920
1.0
1.1
2.0
50
Units
V
nA
nA
mV
mV
V
V
pF
nS
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
325
Ta= 25°C
300
275
3
5
10
20 30 50
100
IR - REVERSE CURRENT (uA)
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 55 to 205 V
50
Ta= 25°C
40
30
20
10
0
55
75
95 115 135 155 175 195
V R - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 180 to 255 V
100
90 Ta= 25°C
80
70
60
50
40
30
20
180
200
220
240
VR - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten Degree C increase in Temperature
255
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
Ta= 25°C
450
400
350
300
250
1
23 5
10 20 30 50 100
IF - FORWARD CURRENT (uA)
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