MMBD1404 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
MMBD1404 Datasheet PDF : 5 Pages
| |||
Discrete POWER & Signal
Technologies
MMBD1401 / 1403 / 1404 / 1405
3
SOT-23
3
29
1
2
2
MARKING
1
MMBD1401 29 MMBD1404 33
MMBD1403 32 MMBD1405 34
CONNECTION DIAGRAMS
1401
3
3
1403
1
1404
2 NC
3
1
2
3 1405
1
2
1
2
High Voltage General Purpose Diode
Sourced from Process 1H.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
W IV
IO
IF
if
if(surge)
Tstg
TJ
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
175
200
600
700
1.0
2.0
-55 to +150
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
mA
mA
mA
A
A
°C
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
MMBD1401/1403/1404/1405*
350
2.8
357
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Units
mW
mW /°C
°C/W
ã 1997 Fairchild Semiconductor Corporation
Share Link: 