MKP3V120(2000) Ver la hoja de datos (PDF) - ON Semiconductor
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MKP3V120 Datasheet PDF : 8 Pages
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MKP3V120, MKP3V240
THERMAL CHARACTERISTICS
1.0
ZqJL(t) = RqJL • r(t)
0.5 DTJL = Ppk RqJL[r(t)]
where:
tp
TIME
0.3 DTJL = the increase in junction temperature above the
0.2 lead temperature
r(t) = normalized value of transient thermal resistance at
0.1 time, t from this figure. For example,
r(tp) = normalized value of
0.05 transient resistance at time tp.
0.03
0.02
0.01
0.2
0.5 1.0 2.0
5.0 10 20
50 100 200
t, TIME (ms)
Figure 5. Thermal Response
LEAD LENGTH = 1/4″
The temperature of the lead should be
measured using a thermocouple placed on the
lead as close as possible to the tie point. The
thermal mass connected to the tie point is
normally large enough so that it will not
significantly respond to heat surges generated
in the diode as a result of pulsed operation
once steady–state conditions are achieved.
Using the measured value of TL, the junction
temperature may be determined by:
TJ = TL + DTJL
500 1.0 k 2.0 k
5.0 k 10 k 20 k
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Breakover Current
250
225
200
175
150
125
100
75
50
25
0
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current
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